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dc.contributor.authorChen, S. W.en_US
dc.contributor.authorKao, T. T.en_US
dc.contributor.authorWu, T. T.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2014-12-08T15:24:16Z-
dc.date.available2014-12-08T15:24:16Z-
dc.date.issued2010en_US
dc.identifier.isbn978-0-8194-7998-3en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/16865-
dc.description.abstractGaN-based photonic crystal surface-emitting lasers(PCSELs) with AlN/GaN distributed Bragg reflectors were fabricated and analyzed. Different lasing characteristics of GaN-based PCSEL has been determeined and demonstrated by the PC lattice constants. The laser emission behavior covered the whole PC patterns of 50 mu m in diameter. Under the optical pumping at room temperature, the PCSEL with PC lattice constant of 230nm shows a threshold energy density of about 2.7 mJ/cm(2). Above the threshold, one dominated peak emits at 420.11 nm with a linewidth of 1.1 angstrom. The lasing wavelength emitted from PC lasers with different lattice constants occurs at the calculated band-edges provided by the PC patterns which further shows different polarization angles due to the light diffracted in specific directions, corresponding exactly to Gamma, K, and M directions in the K-space. The PCSEL also shows a characteristic temperature of 148K and a spontaneous emission coupling efficiency beta of about 5x10(-3). Besides, the coupled-wave model in the PC hexagonal-lattice is applied to distinguish the discrepancy in threshold power and the corresponding coupling coefficient. The results show the lasing actions within Gamma, K, and M modes have the substantial relation between the threshold energy density and the coupling coefficient.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectphotonic crystalen_US
dc.subjectsurface emitting laseren_US
dc.titleThe Lasing Characteristics of GaN-based Two-dimensional Photonic Crystal Surface Emitting Lasersen_US
dc.typeArticleen_US
dc.identifier.journalGALLIUM NITRIDE MATERIALS AND DEVICES Ven_US
dc.citation.volume7602en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000285576300023-
Appears in Collections:Conferences Paper


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