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dc.contributor.authorKuo, Yu-Yenen_US
dc.contributor.authorLi, Tze-Hueien_US
dc.contributor.authorYao, Jing-Nengen_US
dc.contributor.authorLin, Chiung-Yuanen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:24:17Z-
dc.date.available2014-12-08T15:24:17Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn0013-4686en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.electacta.2012.05.157en_US
dc.identifier.urihttp://hdl.handle.net/11536/16873-
dc.description.abstractThis paper describes a crystallization method for anodized TiO2 nanotube-array using a hydrothermal process. Pre-sintered TiO2 nanotube-array could further crystallize without experiencing a collapse of the nanotubes under the hydrothermal environment. Applying the hydrothermal crystallization method, the transition of surface bonds of nanotube from Ti-O to Ti-OH/Ti-OH2 can be controlled by acidic hydrothermal pH levels. Dissolution and structural transformation of nanotubes was easily induced if the hydrothermal environment became basic. These effects depicted great influence on the anchoring of carboxylate groups on the surface of TiO2 nanotubes and affected the performance of the dye-sensitized solar cell utilizing the hydrothermally crystallized TiO2 nanotubes as the photoelectrode. The photoenergy conversion efficiency increased from 6.40% for thermally annealed nanotubes to 7.13% for hydrothermally crystallized ones under illumination of 100 rnW cm(-2). (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTiO2 nanotubeen_US
dc.subjectHydrothermalen_US
dc.subjectCrystallizationen_US
dc.subjectDye-sensitized solar cellsen_US
dc.subjectHydroxyl groupen_US
dc.titleHydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO2 nanotube-arrays for more efficient photoenergy conversionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.electacta.2012.05.157en_US
dc.identifier.journalELECTROCHIMICA ACTAen_US
dc.citation.volume78en_US
dc.citation.issueen_US
dc.citation.spage236en_US
dc.citation.epage243en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000308259500032-
dc.citation.woscount8-
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