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dc.contributor.authorMilekhin, Alexander G.en_US
dc.contributor.authorYeryukov, Nikolay A.en_US
dc.contributor.authorSveshnikova, Larisa L.en_US
dc.contributor.authorDuda, Tatyana A.en_US
dc.contributor.authorKosolobov, Sergey S.en_US
dc.contributor.authorLatyshev, Alexander V.en_US
dc.contributor.authorSurovtsev, Nikolay V.en_US
dc.contributor.authorAdichtchev, Sergey V.en_US
dc.contributor.authorHimcinschi, Cameliuen_US
dc.contributor.authorZenkevich, Eduard I.en_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorZahn, Dietrich R. T.en_US
dc.date.accessioned2014-12-08T15:24:19Z-
dc.date.available2014-12-08T15:24:19Z-
dc.date.issued2012-08-16en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jp210720ven_US
dc.identifier.urihttp://hdl.handle.net/11536/16905-
dc.description.abstractWe present a study of resonant and surface enhanced Raman scattering by arrays of nanocrystals (cadmium sulfide CdS, lead selenide PbSe, and zinc oxide ZnO) with various areal density fabricated by using the Langmuir-Blodgett technique and colloidal chemistry. Resonant Raman scattering by transverse, longitudinal, and surface optical (TO, LO, and SO) phonons and their overtones up to ninth order was achieved for nanocrystal (NC) arrays by adjusting the laser energy to that of the interband transitions. The resonance enhancement allowed a Raman response from arrays of NCs with a low areal density (down to 10 PbSe NCs per 1 mu m(2)) to be measured. An enhancement of Raman scattering by LO and SO modes in CdS NC arrays with a low areal density by a factor of about 730 was achieved due to the resonant surface enhanced Raman scattering effect.en_US
dc.language.isoen_USen_US
dc.titleRaman Scattering for Probing Semiconductor Nanocrystal Arrays with a Low Areal Densityen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jp210720ven_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume116en_US
dc.citation.issue32en_US
dc.citation.spage17164en_US
dc.citation.epage17168en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000307494600044-
dc.citation.woscount6-
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