THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS

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DC 欄位	值	語言
dc.contributor.author	YEH, CF	en_US
dc.contributor.author	LIN, SS	en_US
dc.contributor.author	FAN, CL	en_US
dc.date.accessioned	2014-12-08T15:03:07Z	-
dc.date.available	2014-12-08T15:03:07Z	-
dc.date.issued	1995-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.468271	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1690	-
dc.description.abstract	To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT's), a thinner oxide is developed by liquid-phase deposition with a small quantity, of H2O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future.	en_US
dc.language.iso	en_US	en_US
dc.title	THINNER LIQUID-PHASE DEPOSITED OXIDE FOR POLYSILICON THIN-FILM TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.468271	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	11	en_US
dc.citation.spage	473	en_US
dc.citation.epage	475	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995TA68100002	-
dc.citation.woscount	7	-
顯示於類別：	期刊論文

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