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dc.contributor.authorYu, Hung Weien_US
dc.contributor.authorChung, Chen Chenen_US
dc.contributor.authorWang, Chin Teen_US
dc.contributor.authorHong Quan Nguyenen_US
dc.contributor.authorBinh Tinh Tranen_US
dc.contributor.authorLin, Kung Liangen_US
dc.contributor.authorDee, Chang Fuen_US
dc.contributor.authorMajlis, Burhanuddin Yeopen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:24:24Z-
dc.date.available2014-12-08T15:24:24Z-
dc.date.issued2012-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.51.080208en_US
dc.identifier.urihttp://hdl.handle.net/11536/16928-
dc.description.abstractInGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) at higher concentration ratios (185 x) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 6 degrees off GaAs substrates. Furthermore, the cell design with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics. (c) 2012 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleInGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.51.080208en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume51en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000307992700009-
dc.citation.woscount0-
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