HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING

Abstract

A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).