完整後設資料紀錄
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dc.contributor.authorChien, Yun-Shanen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorChou, Chia-Hsinen_US
dc.contributor.authorChou, Jung-Chuanen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:24:26Z-
dc.date.available2014-12-08T15:24:26Z-
dc.date.issued2012-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2012.6358en_US
dc.identifier.urihttp://hdl.handle.net/11536/16947-
dc.description.abstractA novel, simple and low-temperature ultrasonic spray method was developed to fabricate the multi-walled carbon-nanotubes (MWCNTs) based extended-gate field-effect transistors (EGFETs) as the pH sensor. With an acid-treated process, the chemically functionalized two-dimensional MWCNT network could provide plenty of functional groups which exhibit hydrophilic property and serve as hydrogen sensing sites. For the first time, the EGFET using a MWCNT structure could achieve a wide sensing rage from pH = 1 to pH = 13. Furthermore, the pH sensitivity and linearity values of the CNT pH-EGFET devices were enhanced to 51.74 mV/pH and 0.9948 from pH = 1 to pH = 13 while the sprayed deposition reached 50 times. The sensing properties of hydrogen and hydroxyl ions show significantly dependent on the sprayed deposition times, morphologies, crystalline and chemical bonding of acid-treated MWCNT. These results demonstrate that the MWCNT-EGFETs are very promising for the applications in the pH and biomedical sensors.en_US
dc.language.isoen_USen_US
dc.subjectMulti-Walled Carbon Nanotubeen_US
dc.subjectExtended-Gate Field-Effect Transistoren_US
dc.subjectpH Sensoren_US
dc.titleThe pH Sensing Characteristics of the Extended-Gate Field-Effect Transistors of Multi-Walled Carbon-Nanotube Thin Film Using Low-Temperature Ultrasonic Spray Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2012.6358en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue7en_US
dc.citation.spage5423en_US
dc.citation.epage5428en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000307604700052-
dc.citation.woscount3-
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