HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING

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DC Field	Value	Language
dc.contributor.author	LIOU, BW	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:03:07Z	-
dc.date.available	2014-12-08T15:03:07Z	-
dc.date.issued	1995-10-26	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:19951315	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1694	-
dc.description.abstract	A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).	en_US
dc.language.iso	en_US	en_US
dc.subject	SCHOTTKY DIODES	en_US
dc.subject	POLYSILICON	en_US
dc.title	HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:19951315	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	22	en_US
dc.citation.spage	1950	en_US
dc.citation.epage	1951	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995TE33900047	-
dc.citation.woscount	8	-
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