HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING

Title:	HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
Authors:	LIOU, BW LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	SCHOTTKY DIODES;POLYSILICON
Issue Date:	26-Oct-1995
Abstract:	A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).
URI:	http://dx.doi.org/10.1049/el:19951315 http://hdl.handle.net/11536/1694
ISSN:	0013-5194
DOI:	10.1049/el:19951315
Journal:	ELECTRONICS LETTERS
Volume:	31
Issue:	22
Begin Page:	1950
End Page:	1951
Appears in Collections:	Articles

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