HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING

標題:	HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
作者:	LIOU, BW LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	SCHOTTKY DIODES;POLYSILICON
公開日期:	26-十月-1995
摘要:	A new Schottky diode structure which uses the p(+)-polycrystalline silicon (polysilicon) diffused guard ring is proposed. The diode gives nearly ideal J-V characteristics with a high reverse breakdown voltage (148V) and a low reverse leakage current density (8.4 mu A/cm(2)).
URI:	http://dx.doi.org/10.1049/el:19951315 http://hdl.handle.net/11536/1694
ISSN:	0013-5194
DOI:	10.1049/el:19951315
期刊:	ELECTRONICS LETTERS
Volume:	31
Issue:	22
起始頁:	1950
結束頁:	1951
顯示於類別：	期刊論文

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