Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser

doi:10.1117/12.841897

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chen, Yi-Fan	en_US
dc.contributor.author	Huang, S. C.	en_US
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Liu, S. C.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:24:37Z	-
dc.date.available	2014-12-08T15:24:37Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-0-8194-7974-7	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17084	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.841897	en_US
dc.description.abstract	We report a low-temperature 1.3 mu m AlGaInAs quantum-well laser pumped by a 1.06 mu m active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.	en_US
dc.language.iso	en_US	en_US
dc.subject	VECSEL	en_US
dc.subject	AlGaInAs	en_US
dc.subject	quantum well	en_US
dc.title	Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1117/12.841897	en_US
dc.identifier.journal	SOLID STATE LASERS XIX: TECHNOLOGY AND DEVICES	en_US
dc.citation.volume	7578	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000284936100028	-
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