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dc.contributor.authorHsieh, M. T.en_US
dc.contributor.authorChang, C. C.en_US
dc.contributor.authorHu, C. A.en_US
dc.contributor.authorHuang, Y. T.en_US
dc.contributor.authorYang, S. L.en_US
dc.contributor.authorChen, J. F.en_US
dc.contributor.authorHwang, S. W.en_US
dc.contributor.authorChen, C. H.en_US
dc.date.accessioned2014-12-08T15:24:38Z-
dc.date.available2014-12-08T15:24:38Z-
dc.date.issued2006en_US
dc.identifier.urihttp://hdl.handle.net/11536/17116-
dc.description.abstractWe report an efficient p-type doping of NPB layer using WO(3) as a p-dopant. We find that increasing the WO(3) volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.en_US
dc.language.isoen_USen_US
dc.titleAdmittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxideen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3en_US
dc.citation.spage1315en_US
dc.citation.epage1318en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000258482700337-
Appears in Collections:Conferences Paper