標題: Admittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxide
作者: Hsieh, M. T.
Chang, C. C.
Hu, C. A.
Huang, Y. T.
Yang, S. L.
Chen, J. F.
Hwang, S. W.
Chen, C. H.
電子物理學系
Department of Electrophysics
公開日期: 2006
摘要: We report an efficient p-type doping of NPB layer using WO(3) as a p-dopant. We find that increasing the WO(3) volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.
URI: http://hdl.handle.net/11536/17116
期刊: IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 1315
結束頁: 1318
Appears in Collections:Conferences Paper