Admittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxide

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsieh, M. T.	en_US
dc.contributor.author	Chang, C. C.	en_US
dc.contributor.author	Hu, C. A.	en_US
dc.contributor.author	Huang, Y. T.	en_US
dc.contributor.author	Yang, S. L.	en_US
dc.contributor.author	Chen, J. F.	en_US
dc.contributor.author	Hwang, S. W.	en_US
dc.contributor.author	Chen, C. H.	en_US
dc.date.accessioned	2014-12-08T15:24:38Z	-
dc.date.available	2014-12-08T15:24:38Z	-
dc.date.issued	2006	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17116	-
dc.description.abstract	We report an efficient p-type doping of NPB layer using WO(3) as a p-dopant. We find that increasing the WO(3) volume percentage can reduce the activation energy of the NPB layer and increase the hole concentration in NPB layer. As a result, the hole-injection can be improved via tunneling through a narrow depletion region due to the increasing band bending which corresponds to the difference of Fermi level position between the ITO and the NPB layer.	en_US
dc.language.iso	en_US	en_US
dc.title	Admittance spectroscopy of the electric properties of 1,4-bis[N-(1-naphthyl)-N '-phenylamino]-4,4 ' diamine doped with tungsten oxide	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	1315	en_US
dc.citation.epage	1318	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000258482700337	-
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