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dc.contributor.authorLin, Y. H.en_US
dc.contributor.authorLee, T. C.en_US
dc.contributor.authorLin, J. J.en_US
dc.contributor.authorChang, H. M.en_US
dc.contributor.authorHuang, Y. S.en_US
dc.date.accessioned2014-12-08T15:24:41Z-
dc.date.available2014-12-08T15:24:41Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7354-0347-3en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17134-
dc.description.abstractIridium dioxide (IrO2) nanorods have been prepared by metal-organic chemical vapor deposition method. Applying the standard electron-beam lithography technique, a single nanorod with a diameter of I 10 nm is contacted by three Cr/Au fingers from above. The resistance measurements on this nanorod have been performed between 10 and 300 K, using different probe configurations. We observe that the resistivity rho of the nanorod has a value <= 120 mu Omega cm at 300 K. On the other hand, the temperature dependence of the contact resistance R obeys the law logR proportional to T-1/2 below 100 K. The conduction process through the contact is ascribed to the transport of electrons via hopping in granular metals accidentally formed at the contact region.en_US
dc.language.isoen_USen_US
dc.subjectiridium dioxide nanoroden_US
dc.subjecthopping transporten_US
dc.subjectgranular metalen_US
dc.titleElectrical measurements on iridium dioxide nanorodsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalLow Temperature Physics, Pts A and Ben_US
dc.citation.volume850en_US
dc.citation.spage1484en_US
dc.citation.epage1485en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000243396400673-
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