完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Y. H. | en_US |
dc.contributor.author | Lee, T. C. | en_US |
dc.contributor.author | Lin, J. J. | en_US |
dc.contributor.author | Chang, H. M. | en_US |
dc.contributor.author | Huang, Y. S. | en_US |
dc.date.accessioned | 2014-12-08T15:24:41Z | - |
dc.date.available | 2014-12-08T15:24:41Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.isbn | 0-7354-0347-3 | en_US |
dc.identifier.issn | 0094-243X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/17134 | - |
dc.description.abstract | Iridium dioxide (IrO2) nanorods have been prepared by metal-organic chemical vapor deposition method. Applying the standard electron-beam lithography technique, a single nanorod with a diameter of I 10 nm is contacted by three Cr/Au fingers from above. The resistance measurements on this nanorod have been performed between 10 and 300 K, using different probe configurations. We observe that the resistivity rho of the nanorod has a value <= 120 mu Omega cm at 300 K. On the other hand, the temperature dependence of the contact resistance R obeys the law logR proportional to T-1/2 below 100 K. The conduction process through the contact is ascribed to the transport of electrons via hopping in granular metals accidentally formed at the contact region. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | iridium dioxide nanorod | en_US |
dc.subject | hopping transport | en_US |
dc.subject | granular metal | en_US |
dc.title | Electrical measurements on iridium dioxide nanorods | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | Low Temperature Physics, Pts A and B | en_US |
dc.citation.volume | 850 | en_US |
dc.citation.spage | 1484 | en_US |
dc.citation.epage | 1485 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000243396400673 | - |
顯示於類別: | 會議論文 |