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dc.contributor.authorLiao, Yu-Shengen_US
dc.contributor.authorChiu, I-Shiangen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.date.accessioned2014-12-08T15:24:42Z-
dc.date.available2014-12-08T15:24:42Z-
dc.date.issued2006en_US
dc.identifier.isbn0-8194-6446-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17144-
dc.identifier.urihttp://dx.doi.org/10.1117/12.685543en_US
dc.description.abstractA 30nm wavelength-tunable backward dark-optical-comb injection-mode-locked semiconductor optical amplifier fiber laser (SOAFL) with pedestal-free is reported after high-order soliton compression with maximum pulse compression ratio of up to 80. Shortest mode-locked SOAFL pulsewidth of 15 ps at 1 GHz is generated, which can further be compressed to 180 fs after linear chirp compensation, nonlinear soliton compression, and bireftingent filtering. The pedestal-free eighth-order soliton can be obtained by injecting the amplified pulse with peak power of 51 W into a 107.5m-long single-mode fiber (SMF), providing a linewidth and timebandwidth product of 13.8 mn and 0.31, respectively. The tolerance in SMF length is relatively large (100-300 m) for obtaining < 200fs SOAFL pulsewidth at wavelength tuning range of 1530-1560 mn. By extending the repetition frequency of dark-optical-comb up to 10 GHz, the mode-locked SOAFL pulsewidth can be slightly shortened from 5.4 ps to 3.9 ps after dispersion compensating, and further to 400 fs after second-order soliton compression. The lasing linewidth, time-bandwidth product and pulsewidth suppressing ratio of the SOAFL soliton become 4.5 nm, 0.33, and 10, respectively.en_US
dc.language.isoen_USen_US
dc.subjectsOAen_US
dc.subjectmode-locken_US
dc.subjectfiber laseren_US
dc.subjectsolitonen_US
dc.subjectchirpen_US
dc.subjectpulse compensationen_US
dc.titleFemtosecond harmonic optical-Injection mode-locked semiconductor optical amplifier based fiber lasersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.685543en_US
dc.identifier.journalPassive Components and Fiber-Based Devices III, Pts 1 and 2en_US
dc.citation.volume6351en_US
dc.citation.spageU35en_US
dc.citation.epageU43en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000243501300006-
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