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dc.contributor.authorPeng, Yu-Yunen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorHsu, Chia-Hungen_US
dc.date.accessioned2014-12-08T15:24:43Z-
dc.date.available2014-12-08T15:24:43Z-
dc.date.issued2006en_US
dc.identifier.isbn1-55899-845-4en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/17161-
dc.description.abstractZnO-SiO2 nanocomposite thin films were prepared using RF sputtering method without substrate heating. The photoluminance (PL) measurements showed that the ZnO-SiO2 nanocomposite thin films are able to emit white light consisting of violet, blue, and green-yellow band emissions. The blue emission was attributed to the large amount of ZnO/SiO2 interfaces, which enlarges the depletion layer width and then enhances the related transition. Further analyses indicated that the defect structure of samples could be manipulated by the amount and distribution of ZnO nanoparticles in SiO2 matrix to yield distinct luminescence property.en_US
dc.language.isoen_USen_US
dc.titleWhite-light emitting ZnO-SiO2 nanocomposite thin films prepared by sputtering methoden_US
dc.typeProceedings Paperen_US
dc.identifier.journalProgress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applicationsen_US
dc.citation.volume891en_US
dc.citation.spage533en_US
dc.citation.epage538en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000239521000082-
Appears in Collections:Conferences Paper