完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Tzung-Hanen_US
dc.contributor.authorMeng, Chinchunen_US
dc.date.accessioned2014-12-08T15:24:43Z-
dc.date.available2014-12-08T15:24:43Z-
dc.date.issued2006en_US
dc.identifier.isbn978-1-4244-0548-0en_US
dc.identifier.issn0886-1420en_US
dc.identifier.urihttp://hdl.handle.net/11536/17171-
dc.description.abstractA 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.en_US
dc.language.isoen_USen_US
dc.subjectSiGeBiCMOSen_US
dc.subjectsub-harmonic mixeren_US
dc.subjectGilbert mixeren_US
dc.subjectse6r-mixingen_US
dc.subject2LO-to-RF isolationen_US
dc.titleA high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalTENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4en_US
dc.citation.spage1288en_US
dc.citation.epage1289en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000246127502058-
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