完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Tzung-Han | en_US |
dc.contributor.author | Meng, Chinchun | en_US |
dc.date.accessioned | 2014-12-08T15:24:43Z | - |
dc.date.available | 2014-12-08T15:24:43Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.isbn | 978-1-4244-0548-0 | en_US |
dc.identifier.issn | 0886-1420 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/17171 | - |
dc.description.abstract | A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SiGeBiCMOS | en_US |
dc.subject | sub-harmonic mixer | en_US |
dc.subject | Gilbert mixer | en_US |
dc.subject | se6r-mixing | en_US |
dc.subject | 2LO-to-RF isolation | en_US |
dc.title | A high 2LO-RF isolation SiGeBiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4 | en_US |
dc.citation.spage | 1288 | en_US |
dc.citation.epage | 1289 | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000246127502058 | - |
顯示於類別: | 會議論文 |