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dc.contributor.authorMENG, HFen_US
dc.date.accessioned2014-12-08T15:03:09Z-
dc.date.available2014-12-08T15:03:09Z-
dc.date.issued1995-10-01en_US
dc.identifier.issn1050-2947en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevA.52.3239en_US
dc.identifier.urihttp://hdl.handle.net/11536/1717-
dc.description.abstractWe show that sub-Poisson photoelectrons can result from the finite relaxation time of the fundamental photoelectron-emitting entities, which could be individual atoms, or valence-band electrons, etc., depending on the type of the detectors. After identifying the precise quantum-mechanical criterion for a light without the intrinsic antibunching property, it is demonstrated that the variance to mean ratio of photoelectron counts within a fixed time period can be reduced to as small as 1/2, even for such light. The condition for strong fluctuation reduction is found to be the saturation of light absorption. Semiconductor photodetectors are considered in relative details, and their photoelectron statistics are expressed in terms of the intrinsic material parameters.en_US
dc.language.isoen_USen_US
dc.titleSUB-POISSON PHOTOELECTRON STATISTICS IN SATURATED LIGHT-ABSORPTIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevA.52.3239en_US
dc.identifier.journalPHYSICAL REVIEW Aen_US
dc.citation.volume52en_US
dc.citation.issue4en_US
dc.citation.spage3239en_US
dc.citation.epage3243en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Physicsen_US
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