完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Chia-Yuanen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLien, Yi-Chungen_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.contributor.authorChen, Szu-Hungen_US
dc.contributor.authorChu, Li-Hsinen_US
dc.date.accessioned2014-12-08T15:24:46Z-
dc.date.available2014-12-08T15:24:46Z-
dc.date.issued2006en_US
dc.identifier.isbn978-0-7803-9730-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/17216-
dc.identifier.urihttp://dx.doi.org/10.1109/SMELEC.2006.381095en_US
dc.description.abstractA 70-nm In0.52Al0.48As/In0.6Ga0.4As power MHEMT with double delta-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mm. The saturated drain-source current of the device is 890 mA/mm. A current gain cutoff frequency (f(T)) of 200 GHz and a maximum oscillation frequency of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 x 40 mu m device demonstrates a maximum output power of 14.5 dBm with P1dB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.en_US
dc.language.isoen_USen_US
dc.titleHigh-performance In0.52Al0.48As/In(0.6)Ga(0.)4As power metamorphic HEMT for Ka-band applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/SMELEC.2006.381095en_US
dc.identifier.journal2006 IEEE International Conference on Semiconductor Electronics, Proceedingsen_US
dc.citation.spage422en_US
dc.citation.epage424en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000247966500091-
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