A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology

doi:10.1109/MWSYM.2006.249578

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DC 欄位	值	語言
dc.contributor.author	Wu, Tzung-Han	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.date.accessioned	2014-12-08T15:24:55Z	-
dc.date.available	2014-12-08T15:24:55Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-0-7803-9541-1	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17296	-
dc.identifier.uri	http://dx.doi.org/10.1109/MWSYM.2006.249578	en_US
dc.description.abstract	A 5.2 GHz three-level sub-harmonic downconversion Gilbert mixer using GaInP/GaAs HBT (Heterojunction Bipolar Transistor) technology is demonstrated in this paper. The LO frequency is half of the RF frequency for the three-level sub-harmonic mixer architecture; therefore, the RF frequency is 5.2004 GHz and LO frequency is 2.6 GHz. The conversion gain is 14.5 dB, IP(1dB') is -18 dBm, IIP(2) is 13 dBm and the IIP(3) is -5 dBm when the LO power equals to -8 dBm. The 2LO-to-RF leakage is about -83 dBm. The RF input return loss is better than -18 dB from DC to 6GHz.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaInP/GaAs HBT	en_US
dc.subject	sub-harmonic mixer	en_US
dc.subject	Gilbert mixer	en_US
dc.subject	self-mixing	en_US
dc.subject	2LO-to-RF isolation	en_US
dc.title	A high 2LO-to-RF isolation GaInP/GaAs HBT sub-harmonic Gilbert mixer using three-level topology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/MWSYM.2006.249578	en_US
dc.identifier.journal	2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5	en_US
dc.citation.spage	1505	en_US
dc.citation.epage	1508	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000244379003060	-
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