4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO

doi:10.1109/MWSYM.2006.249746

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Meng, C. C.	en_US
dc.contributor.author	Tseng, S. C.	en_US
dc.contributor.author	Chang, Y. W.	en_US
dc.contributor.author	Su, J. Y.	en_US
dc.contributor.author	Huang, G. W.	en_US
dc.date.accessioned	2014-12-08T15:24:55Z	-
dc.date.available	2014-12-08T15:24:55Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-0-7803-9541-1	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17298	-
dc.identifier.uri	http://dx.doi.org/10.1109/MWSYM.2006.249746	en_US
dc.description.abstract	The fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) transformer-based top-series quadrature voltage controlled oscillator (QVCO) is demonstrated at 4 GHz. The transformers on the semi-insulating GaAs substrate possess good electrical properties at high frequencies. The quadrature VCO at 4.1 GHz has phase noise of -120 dBc/Hz at 1MHz offset frequency, output power of 2 dBm and the figure of merit (FOM) -178 dBc/Hz.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaInP/GaAs heterojunction bipolar transistor (HBT)	en_US
dc.subject	top-series coupling	en_US
dc.subject	quadrature voltage controlled oscillator (QVCO)	en_US
dc.subject	transformer	en_US
dc.subject	phase noise	en_US
dc.title	4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/MWSYM.2006.249746	en_US
dc.identifier.journal	2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5	en_US
dc.citation.spage	1809	en_US
dc.citation.epage	1812	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000244379004036	-
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