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dc.contributor.authorGuo, J. C.en_US
dc.contributor.authorLin, Y. M.en_US
dc.date.accessioned2014-12-08T15:24:55Z-
dc.date.available2014-12-08T15:24:55Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7803-9573-5en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://hdl.handle.net/11536/17304-
dc.description.abstractA lossy substrate model for accurate simulation of extrinsic noise and a lossy substrate de-embedding method for precise extraction of intrinsic noise have been proven by 80 nm, super-100 GHz f(T) RF nMOS. The method is further applied to 65 nm 160-GHz f(T) nMOS to investigate aggressive gate length scaling effect on P.F noise. The extrinsic noise reveals abnormally weak dependence on gate length scaling even with 50 similar to 60% improvement on f(T) but strong dependence on finger number. The intrinsic noise extracted through lossy substrate de-embedding can consistently reflect the gain in fT and weak dependence on finger number. The NFmin at 10 GHz can be suppressed to 0.5dB for 65 nm nMOS corresponding to an optimized drain current, which is around 0.2 dB improvement over 80 nm devices. Noise suppression due to gate length scaling becomes even more significant in higher current region. The noise reduction is attributed to lower noise resistance (R-n) and real part of optimum source admittance (Re(Y-opt)). The accurate extraction of intrinsic noise provides useful guideline for RF CMOS device design and optimization in terms of speed, power, and noise.en_US
dc.language.isoen_USen_US
dc.subjectRFen_US
dc.subjectnoiseen_US
dc.subjectlossy substrateen_US
dc.subjectgate length scalingen_US
dc.title65-nm 160-GHz f(T) RF n-MOSFET intrinsic noise extraction and modeling using lossy substrate de-embedding methoden_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papersen_US
dc.citation.spage349en_US
dc.citation.epage352en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000239086300081-
Appears in Collections:Conferences Paper