A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, William P. N.	en_US
dc.contributor.author	Su, P.	en_US
dc.contributor.author	Wang, J. S.	en_US
dc.contributor.author	Lien, C. H.	en_US
dc.contributor.author	Chang, C. H.	en_US
dc.contributor.author	Goto, K.	en_US
dc.contributor.author	Diaz, C. H.	en_US
dc.date.accessioned	2014-12-08T15:24:57Z	-
dc.date.available	2014-12-08T15:24:57Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	1-4244-0181-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17322	-
dc.language.iso	en_US	en_US
dc.title	A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers	en_US
dc.citation.spage	143	en_US
dc.citation.epage	144	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000239791300057	-
顯示於類別：	會議論文