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dc.contributor.authorChou, Hong-Chiehen_US
dc.contributor.authorKim, Sung-Oen_US
dc.contributor.authorChen, Kuang-Langen_US
dc.contributor.authorChen, Samuelen_US
dc.contributor.authorLee, Chien-Pangen_US
dc.contributor.authorHsu, Chien-Hsingen_US
dc.contributor.authorChou, Kuo-Chingen_US
dc.contributor.authorHuang, Chih-Mingen_US
dc.date.accessioned2014-12-08T15:24:59Z-
dc.date.available2014-12-08T15:24:59Z-
dc.date.issued2006en_US
dc.identifier.issn1738-7558en_US
dc.identifier.urihttp://hdl.handle.net/11536/17368-
dc.description.abstractMagnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigation the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.en_US
dc.language.isoen_USen_US
dc.titleThe Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERSen_US
dc.citation.spage383en_US
dc.citation.epage386en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000259669300081-
Appears in Collections:Conferences Paper


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