The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, Hong-Chieh	en_US
dc.contributor.author	Kim, Sung-O	en_US
dc.contributor.author	Chen, Kuang-Lang	en_US
dc.contributor.author	Chen, Samuel	en_US
dc.contributor.author	Lee, Chien-Pang	en_US
dc.contributor.author	Hsu, Chien-Hsing	en_US
dc.contributor.author	Chou, Kuo-Ching	en_US
dc.contributor.author	Huang, Chih-Ming	en_US
dc.date.accessioned	2014-12-08T15:24:59Z	-
dc.date.available	2014-12-08T15:24:59Z	-
dc.date.issued	2006	en_US
dc.identifier.issn	1738-7558	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17368	-
dc.description.abstract	Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigation the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.	en_US
dc.language.iso	en_US	en_US
dc.title	The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	383	en_US
dc.citation.epage	386	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000259669300081	-
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