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dc.contributor.authorLai, Tai-Xiangen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:25:00Z-
dc.date.available2014-12-08T15:25:00Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7695-2523-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/17381-
dc.description.abstractCable Discharge Event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HBM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-mu m CMOS technology is worse than its HBMESD robustness.en_US
dc.language.isoen_USen_US
dc.titleMethod to evaluate Cable Discharge Event (CDE) reliability of integrated circuits in CMOS technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalISQED 2006: Proceedings of the 7th International Symposium on Quality Electronic Designen_US
dc.citation.spage597en_US
dc.citation.epage602en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000237231000098-
Appears in Collections:Conferences Paper