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dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:25:02Z-
dc.date.available2014-12-08T15:25:02Z-
dc.date.issued2006en_US
dc.identifier.isbn978-90-04-15542-8en_US
dc.identifier.issn1573-4196en_US
dc.identifier.urihttp://hdl.handle.net/11536/17400-
dc.description.abstractIn this paper, we investigate the effect of spin-orbit iteration oil the electron energy spectra for nanoscale semiconductor quantum rings. Our three-dimensional model considers the effective one-electronic hand Hamiltonian, the energy- and position-dependent electron effective mass approximation, and the spin-dependent Bell Daniel-Duke boundary conditions. The nonlinear iterative method is applied to solve the corresponding nonlinear eigenvalue problem, which converges monotonically. It is found that the spin-dependent boundary conditions lead to a spin-splitting of the electron energy states with non-zero angular momentum in nanoscale InAs/GaAs quantum rings. The spin-splitting is strongly dependent upon the dimension of quantum ring and is dominated by the inner radius, the base radius, and the height of quantum ring. At zero magnetic field, the spill-splitting energy is decreased when the radius is increased. Meanwhile, it is greater than that of the InAs/GaAs quantum dot and demonstrates an experimentally measurable quantity (up to 2 meV) for relatively small semiconductor quantum rings.en_US
dc.language.isoen_USen_US
dc.subjectsemiconductor nanostructureen_US
dc.subjectInAs/GaAsen_US
dc.subjectquantum ringsen_US
dc.subjectspin-orbit interactionen_US
dc.subjectenergy spectraen_US
dc.subjectnonlinear schrodinger equationen_US
dc.subjectnonlinear eigenvalue problemen_US
dc.subjectnonlinear iterative methoden_US
dc.subjectmonotone convergenceen_US
dc.titleElectron energy state spin splitting in nanoscale InAs/GaAs semiconductor quantum ringsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalRECENT PROGRESS IN COMPUTATIONAL SCIENCES AND ENGINEERING, VOLS 7A AND 7Ben_US
dc.citation.volume7A-Ben_US
dc.citation.spage838en_US
dc.citation.epage845en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000254378800192-
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