EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HSIA, ST	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	HWANG, HL	en_US
dc.date.accessioned	2014-12-08T15:03:11Z	-
dc.date.available	2014-12-08T15:03:11Z	-
dc.date.issued	1995-09-01	en_US
dc.identifier.issn	0921-5107	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1745	-
dc.description.abstract	A thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n-GaAs was investigated. The lowest value of the specific contact resistance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 400 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. It was noted that In reacted with GaAs and formed a heterojunction ohmic contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting point (156 degrees C) of In, additions of Ni are needed to completely react the remaining In to form a high melting point compound.	en_US
dc.language.iso	en_US	en_US
dc.subject	AUGER ELECTRON SPECTROSCOPY	en_US
dc.subject	GALLIUM ARSENIDE	en_US
dc.subject	CONTACT RESISTANCE	en_US
dc.subject	NICKEL	en_US
dc.title	EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS	en_US
dc.type	Article	en_US
dc.identifier.journal	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY	en_US
dc.citation.volume	33	en_US
dc.citation.issue	2-3	en_US
dc.citation.spage	178	en_US
dc.citation.epage	181	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
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