Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, C. S.	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Chang, C. H.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2014-12-08T15:25:05Z	-
dc.date.available	2014-12-08T15:25:05Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-5184-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17461	-
dc.description.abstract	Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA. (C) 2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5	en_US
dc.citation.spage	3143	en_US
dc.citation.epage	3144	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000274751302557	-
顯示於類別：	會議論文