Circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm CMOS process

Abstract

The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.