DC and AC NBTI stresses in pMOSFETs with PE-SiN capping

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lu, Chia-Yu	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Chang, Yi-Feng	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2014-12-08T15:25:06Z	-
dc.date.available	2014-12-08T15:25:06Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	0-7803-9498-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17482	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2006.251345	en_US
dc.language.iso	en_US	en_US
dc.title	DC and AC NBTI stresses in pMOSFETs with PE-SiN capping	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RELPHY.2006.251345	en_US
dc.identifier.journal	2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL	en_US
dc.citation.spage	727	en_US
dc.citation.epage	728	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000240855800160	-
Appears in Collections:	Conferences Paper

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