Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tsai, M. A.	en_US
dc.contributor.author	Yu, Peichen	en_US
dc.contributor.author	Chao, C. L.	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.contributor.author	Huang, J. J.	en_US
dc.date.accessioned	2014-12-08T15:25:06Z	-
dc.date.available	2014-12-08T15:25:06Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-5184-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17483	-
dc.description.abstract	The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching. (C) 2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Beam Shaping of GaN/InGaN Vertical-Injection Light Emitting Diodes via High-Aspect-Ratio Nanorod Arrays	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5	en_US
dc.citation.spage	449	en_US
dc.citation.epage	450	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000274751300226	-
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