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dc.contributor.authorYen, Chin-Hsienen_US
dc.contributor.authorChang, Win-Mingen_US
dc.contributor.authorCheng, Kuo-Huaen_US
dc.contributor.authorJou, Christina F.en_US
dc.date.accessioned2014-12-08T15:25:08Z-
dc.date.available2014-12-08T15:25:08Z-
dc.date.issued2006en_US
dc.identifier.isbn1-4244-0179-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/17506-
dc.description.abstractThis paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm.en_US
dc.language.isoen_USen_US
dc.titleA new low voltage CMOS micromixer for 2.45GHz applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 International Symposium on VLSI Design, Automation, and Test (VLSI-DAT), Proceedings of Technical Papersen_US
dc.citation.spage301en_US
dc.citation.epage303en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:000239709500080-
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