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dc.contributor.authorDu, Pei-Yingen_US
dc.contributor.authorGuo, Jyh-Chyurnen_US
dc.contributor.authorLee, H. M.en_US
dc.contributor.authorChen, H. M.en_US
dc.contributor.authorShen, Ricken_US
dc.contributor.authorHsu, C. C. -H.en_US
dc.date.accessioned2014-12-08T15:25:08Z-
dc.date.available2014-12-08T15:25:08Z-
dc.date.issued2006en_US
dc.identifier.isbn1-4244-0181-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17507-
dc.description.abstractTransient current models with time and field dependence are proposed. The time dependence follows asymptotic t(-1) behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.en_US
dc.language.isoen_USen_US
dc.titleP-channel SONOS transient current modeling for program and eraseen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papersen_US
dc.citation.spage32en_US
dc.citation.epage33en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000239791300006-
Appears in Collections:Conferences Paper


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