P-channel SONOS transient current modeling for program and erase

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Du, Pei-Ying	en_US
dc.contributor.author	Guo, Jyh-Chyurn	en_US
dc.contributor.author	Lee, H. M.	en_US
dc.contributor.author	Chen, H. M.	en_US
dc.contributor.author	Shen, Rick	en_US
dc.contributor.author	Hsu, C. C. -H.	en_US
dc.date.accessioned	2014-12-08T15:25:08Z	-
dc.date.available	2014-12-08T15:25:08Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	1-4244-0181-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17507	-
dc.description.abstract	Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t(-1) behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.	en_US
dc.language.iso	en_US	en_US
dc.title	P-channel SONOS transient current modeling for program and erase	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers	en_US
dc.citation.spage	32	en_US
dc.citation.epage	33	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000239791300006	-
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