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dc.contributor.authorChen, WZen_US
dc.contributor.authorHsu, KCen_US
dc.date.accessioned2014-12-08T15:25:09Z-
dc.date.available2014-12-08T15:25:09Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9023-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/17539-
dc.description.abstract3-dimentional fully-symmetric transformers are proposed and realized in a standard CMOS technology. In contrast to their planar counterparts, the self resonant frequency (f(SR)) of the proposed architecture is improved by 26 % to 53 %, while the chip area is reduced by 40 % to 70 %. The coupling coefficient (K) can be up to 0.77 at 8 GHz in a two turn two layer architecture. Distributed capacitance model (DCM) of the 3-D transformer is also proposed f(SR) evaulation.en_US
dc.language.isoen_USen_US
dc.subjecttransformeren_US
dc.subjectcoupling coefficienten_US
dc.subjectself resonant frequencyen_US
dc.titleMiniaturized 3-dimensional transformer designen_US
dc.typeProceedings Paperen_US
dc.identifier.journalCICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCEen_US
dc.citation.spage285en_US
dc.citation.epage288en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000234406600061-
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