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dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorLin, Yung-Shengen_US
dc.contributor.authorKung, Li-Jenen_US
dc.contributor.authorChen, Dong-Sianen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:25:11Z-
dc.date.available2014-12-08T15:25:11Z-
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/11536/17572-
dc.description.abstractHighly performance organic thin-film transistors (OTFTs) incorporated with nanoparticles in the dielectric insulators have been demonstrated. The dielectric layers consist of cross-linked poly-4-vinylphenol (PVP) and high dielectric titanium dioxide (TiO(2)) nanoparticles. In order to increase the solubility of TiO(2) nanoparticles in organic solutions, the surface of natioparticles was modified with organosilozane. Moreover, the concern of higher leakage current, while using the nano-composite insulators, has been overcome by P8 treatment. In addition, several models, which have been used to describe the dielectric behavior of composite materials, are also discussed.en_US
dc.language.isoen_USen_US
dc.titleOrganic thin-film transistors based on nanocomposite gate insulators for high-current driving applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2en_US
dc.citation.spage1045en_US
dc.citation.epage1048en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000258488800271-
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