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dc.contributor.authorLin, YHen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorChou, THen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2014-12-08T15:25:12Z-
dc.date.available2014-12-08T15:25:12Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9268-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17584-
dc.description.abstractIn this paper, we, for the first time, have successfully fabricated SONOS-type poly-Si-TFT memories employing three kinds of high-k dielectrics, including HfO(2), Hf-silicate and Zr-silicate, as the trapping layer with low-thermal budget processing. It was demonstrated that the fabricated memories exhibit good performance in terms of relatively large memory window, high program/erase speed (1ms/10ms), long retention time (> 10(6)S for 20% charge loss) and negligible read/write disturbances. In particular, 2-bit operation has been successfully demonstrated.en_US
dc.language.isoen_USen_US
dc.title2-bit poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicateen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGESTen_US
dc.citation.spage949en_US
dc.citation.epage952en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236225100217-
Appears in Collections:Conferences Paper