Direct experimental evidence of the hole capture by resonant levels in boron doped silicon

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, ST	en_US
dc.contributor.author	Tulupenko, V	en_US
dc.contributor.author	Cheng, ES	en_US
dc.contributor.author	Dalakyan, A	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Chao, KA	en_US
dc.contributor.author	Belykh, V	en_US
dc.contributor.author	Abramov, A	en_US
dc.contributor.author	Ryzhkov, V	en_US
dc.date.accessioned	2014-12-08T15:25:15Z	-
dc.date.available	2014-12-08T15:25:15Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7354-0257-4	en_US
dc.identifier.issn	0094-243X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17621	-
dc.description.abstract	The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.	en_US
dc.language.iso	en_US	en_US
dc.title	Direct experimental evidence of the hole capture by resonant levels in boron doped silicon	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	Physics of Semiconductors, Pts A and B	en_US
dc.citation.volume	772	en_US
dc.citation.spage	1192	en_US
dc.citation.epage	1193	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000230723900552	-
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