Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | MA, KP | en_US |
dc.contributor.author | LIN, CT | en_US |
dc.contributor.author | CHENG, HC | en_US |
dc.date.accessioned | 2014-12-08T15:03:12Z | - |
dc.date.available | 2014-12-08T15:03:12Z | - |
dc.date.issued | 1995-09-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1766 | - |
dc.description.abstract | By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SHALLOW JUNCTION | en_US |
dc.subject | LOW-TEMPERATURE ANNEALING | en_US |
dc.subject | JUNCTION DEPTH | en_US |
dc.title | NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 9A | en_US |
dc.citation.spage | L1100 | en_US |
dc.citation.epage | L1102 | en_US |
dc.contributor.department | 奈米中心 | zh_TW |
dc.contributor.department | Nano Facility Center | en_US |
Appears in Collections: | Articles |