NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	MA, KP	en_US
dc.contributor.author	LIN, CT	en_US
dc.contributor.author	CHENG, HC	en_US
dc.date.accessioned	2014-12-08T15:03:12Z	-
dc.date.available	2014-12-08T15:03:12Z	-
dc.date.issued	1995-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1766	-
dc.description.abstract	By implanting BF2+ ions into thin polycrystalline Si films with subsequent low-temperature (as low as 500 degrees C) annealing, excellent Pt-silicided shallow p(+)n junctions have been formed. The samples implanted under the conditions of 100 keV/5 x 10(15) cm(-2) showed a leakage of 7 nA/cm(2) and a junction depth of about 0.05 mu m after 500 degrees C annealing, and the current leakages further decreased to a value at about 2 nA/cm(2) when the annealing temperature was raised to 550 degrees C. Various conditions of implant and annealing were examined to determine and characterize their effects on the resultant junctions.	en_US
dc.language.iso	en_US	en_US
dc.subject	SHALLOW JUNCTION	en_US
dc.subject	LOW-TEMPERATURE ANNEALING	en_US
dc.subject	JUNCTION DEPTH	en_US
dc.title	NOVEL TECHNIQUE TO FORM PT-SILICIDED SHALLOW P(+)N JUNCTIONS USING LOW-TEMPERATURE PROCESSES	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	L1100	en_US
dc.citation.epage	L1102	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
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