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dc.contributor.authorKao, Yao-Huangen_US
dc.contributor.authorChen, Wei-Chungen_US
dc.date.accessioned2014-12-08T15:25:19Z-
dc.date.available2014-12-08T15:25:19Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9433-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17697-
dc.description.abstractThe selection of the matched transistor pair in a cascaded architecture for predistortion compensation is nontrivial. In this study, a modified architecture of predistortion with two paths is presented for the high power amplifier. The goal is to develop a IOW linear power amplifier with LDMOS transistor for 8 channels NCDMA repeater from 870 to 880MHz. With the modified scheme, the improvement of intermodulation is larger than 10dB and spurious is less than 50dBc.en_US
dc.language.isoen_USen_US
dc.subjectlinear power amplifieren_US
dc.subjectpredistortionen_US
dc.subjectLDMOSen_US
dc.subjectNCDMAen_US
dc.titleLinear power amplifier with a modified predistortion compensation for NCDMA applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5en_US
dc.citation.spage193en_US
dc.citation.epage196en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:000237449900051-
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