THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LAI, CS	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	LEE, CL	en_US
dc.date.accessioned	2014-12-08T15:03:13Z	-
dc.date.available	2014-12-08T15:03:13Z	-
dc.date.issued	1995-09-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.406796	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1769	-
dc.description.abstract	N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased, This is opposite to that of conventional O-2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.	en_US
dc.language.iso	en_US	en_US
dc.title	THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.406796	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	9	en_US
dc.citation.spage	385	en_US
dc.citation.epage	386	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RQ87100005	-
dc.citation.woscount	21	-
顯示於類別：	期刊論文

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