標題: A physics-based transit time model for GaInP/GaAs HBT devices
作者: Tseng, Sheng-Che
Meng, Chinchun
Chen, Wei-Yu
Su, Jen-Yi
電信工程研究所
Institute of Communications Engineering
關鍵字: transit time;GaInP/GaAs HBT;minority charge;HICUM and VBIC
公開日期: 2005
摘要: A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.
URI: http://hdl.handle.net/11536/17703
ISBN: 0-7803-9433-X
期刊: 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
起始頁: 1031
結束頁: 1034
Appears in Collections:Conferences Paper