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dc.contributor.authorTSAI, MHen_US
dc.contributor.authorSUN, SCen_US
dc.contributor.authorCHIU, HTen_US
dc.contributor.authorTSAI, CEen_US
dc.contributor.authorCHUANG, SHen_US
dc.date.accessioned2014-12-08T15:03:13Z-
dc.date.available2014-12-08T15:03:13Z-
dc.date.issued1995-08-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.114983en_US
dc.identifier.urihttp://hdl.handle.net/11536/1775-
dc.description.abstractWe deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleMETALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.114983en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume67en_US
dc.citation.issue8en_US
dc.citation.spage1128en_US
dc.citation.epage1130en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
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