標題: | A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices |
作者: | Chung, SS Liu, YR Yeh, CF Wu, SR Lai, CS Chang, TY Ho, JH Liu, CY Huang, CT Tsai, CT Shiau, WT Sun, SW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | strained-Si devices;Charge-Pumping(CP);Gated-Diode(GD) methods;Negative Bias Temperature Instability(NBTI) |
公開日期: | 2005 |
摘要: | In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation. |
URI: | http://hdl.handle.net/11536/17834 |
ISBN: | 4-900784-00-1 |
期刊: | 2005 Symposium on VLSI Technology, Digest of Technical Papers |
起始頁: | 86 |
結束頁: | 87 |
顯示於類別: | 會議論文 |