Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, CH | en_US |
dc.contributor.author | Chin, A | en_US |
dc.contributor.author | Chiang, KC | en_US |
dc.contributor.author | Yoo, WJ | en_US |
dc.contributor.author | Cheng, CF | en_US |
dc.contributor.author | McAlister, SP | en_US |
dc.contributor.author | Chi, CC | en_US |
dc.contributor.author | Wu, P | en_US |
dc.date.accessioned | 2014-12-08T15:25:27Z | - |
dc.date.available | 2014-12-08T15:25:27Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.isbn | 4-900784-00-1 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/17838 | - |
dc.description.abstract | Using the strong trapping capability of novel AlN (kappa=10), low voltage drop in high-kappa layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(K=17)/IrO2 device shows good 85 degrees C memory integrity of fast 100 is erase, large 3.7V Delta V-th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V Delta V-th and 3.4V for 85 degrees C 10-year retention at 1 ms erase. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2005 Symposium on VLSI Technology, Digest of Technical Papers | en_US |
dc.citation.spage | 210 | en_US |
dc.citation.epage | 211 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000234973100082 | - |
Appears in Collections: | Conferences Paper |