SYNTHESIS OF CARBON NITRIDE FILMS BY MAGNETICALLY ROTATED ARC-PLASMA JET CHEMICAL-VAPOR-DEPOSITION

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DC Field	Value	Language
dc.contributor.author	YEN, TY	en_US
dc.contributor.author	CHOU, CP	en_US
dc.date.accessioned	2014-12-08T15:03:14Z	-
dc.date.available	2014-12-08T15:03:14Z	-
dc.date.issued	1995-08-01	en_US
dc.identifier.issn	0038-1098	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1786	-
dc.description.abstract	Carbon Nitride films have been grown on nickel substrates by magnetically rotated arc-plasma jet chemical vapor deposition (CVD). These films were characterized by scanning electron microscopy (SEM), wavelength dispersive X-ray spectrometry (WDS) transmission electron microscopy (TEM), and Raman spectroscopy. Small grains (similar to 0.1 mu m) as well as nanocrystallites found in the films were identified to be beta-C3N4. Raman spectrum also confirmed the existence of beta-C3N4 phase in the films through three pronounced Raman bands at low frequency as expected from the Hooke's law approximation.	en_US
dc.language.iso	en_US	en_US
dc.subject	THIN FILMS	en_US
dc.subject	CHEMICAL SYNTHESIS	en_US
dc.subject	SCANNING AND TRANSMISSION ELECTRON MICROSCOPY	en_US
dc.subject	INELASTIC LIGHT SCATTERING	en_US
dc.title	SYNTHESIS OF CARBON NITRIDE FILMS BY MAGNETICALLY ROTATED ARC-PLASMA JET CHEMICAL-VAPOR-DEPOSITION	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID STATE COMMUNICATIONS	en_US
dc.citation.volume	95	en_US
dc.citation.issue	5	en_US
dc.citation.spage	281	en_US
dc.citation.epage	286	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	機械工程學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Mechanical Engineering	en_US
dc.identifier.wosnumber	WOS:A1995RE08600004	-
dc.citation.woscount	63	-
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