Thermal Behavior and self-heating effect in pentacene-based thin film transistors

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wei, Shih-Chiang	en_US
dc.contributor.author	Lee, Po-Tsung	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Lee, Cheng-Chung	en_US
dc.contributor.author	Ho, Jia-Chong	en_US
dc.contributor.author	Hu, Tang-Hsiang	en_US
dc.date.accessioned	2014-12-08T15:25:29Z	-
dc.date.available	2014-12-08T15:25:29Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	978-957-28522-2-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17893	-
dc.description.abstract	Pentacene-based thin film transitors are characterized at four different substrate tempertures (25 degrees C, 45 degrees C, 65 degrees C, and 85 degrees C). The temperature dependence of mobility, threshold voltage, and drain current at and above room temperature is investigated, and self-heating effect is observed and discussed.	en_US
dc.language.iso	en_US	en_US
dc.title	Thermal Behavior and self-heating effect in pentacene-based thin film transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005	en_US
dc.citation.spage	202	en_US
dc.citation.epage	204	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000259399200053	-
顯示於類別：	會議論文